Preparation and structural evolution of TiO2 thin films by low pressure MOCVD

Acta Metallurgica Sinica (English Letters)

Volumn 13, Issue 6, 2000, Pages 1113-1118

  Li, W J ^a   Wu, Z M ^a   Zhao, J F ^a   Wu, Z H ^a   Zhao, X L ^a   Cai, B C ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Deposition; MOCVD; Structural property; Thin film; Titanium dioxide

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL VAPOR DEPOSITION; FUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION;

ANATASE; ANNEALING TEMPERATURE; DEPOSITION RATE; RUTILE; STRUCTURAL EVOLUTION; SUBSTRATE TEMPERATURE; TITANIUM ISOPROPOXIDE;

TITANIUM DIOXIDE;

EID: 0034434924     PISSN: 10067191     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)