Studies of deep trapping levels in undoped and Sn doped Cd1-xZnxTe by thermoelectric effect spectroscopy and thermally stimulated current

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4141, Issue 1, 2000, Pages 11-22

  Krsmanovic, Nemanja ^a   Hunt, Alan W ^a   Lynn, Kelvin G ^a   Flint, Patrick J ^b   Glass, Howard L ^b  

^a WASHINGTON STATE UNIVERSITY   (United States)

^b Johnson Matthey Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTALS; ELECTRIC POTENTIAL; HEATING; IONIZATION OF SOLIDS; POINT DEFECTS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS; THERMOELECTRICITY; TIN;

ANTISITES; CADMIUM ZINC TELLURIDE; DEEP TRAPPING LEVELS; THERMALLY STIMULATED CURRENT (TSC); THERMOELECTRIC EFFECT SPECTROSCOPY (TEES); VACANCIES;

RADIATION DETECTORS;

EID: 0034431304     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.407577     Document Type: Article

References (0)