SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages

Dependence of H diffusion in hydrogenated silicon on doping and the Fermi level

(2) Beyer, W a Zastrow, U a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL BONDS; DIFFUSION IN SOLIDS; FERMI LEVEL; HYDROGEN; ION IMPLANTATION; MATHEMATICAL MODELS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILANES;

HYDROGENATED SILICON;

AMORPHOUS FILMS;

EID: 0034431038 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: 10.1557/proc-609-a20.4 Document Type: Conference Paper

Times cited : (3)

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