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Materials Research Society Symposium - Proceedings

Volumn 609, Issue , 2000, Pages A581-A586

Structure of si:h films fabricated by plasma-enhanced cvd using hydrogen diluted plasma

(8) Edelman, F a Chack, A a Weil, R a Beserman, R a Werner, P b Rech, B c Roschek, T c Beyer, W c

a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

c FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; HYDROGEN; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILANES; SUBSTRATES; THIN FILMS;

DIFFUSION PLASMA;

SEMICONDUCTING FILMS;

EID: 0034428405 PISSN: 02729172 EISSN: None Source Type: Journal
DOI: 10.1557/proc-609-a5.8 Document Type: Article

Times cited : (1)

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