Photoluminescence of erbium, zinc, and copper doped porous silicon and a phenomenological model for the metal electrodeposition

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 353-357

  Shi, J X ^a   Zhang, X X ^a   Gong, M L ^a   Zhou, J Y ^a   Cheah, K W ^b   Wong, W K ^b  

^a SUN YAT SEN UNIVERSITY   (China)

^b HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; COPPER; CURRENT DENSITY; DOPING (ADDITIVES); ELECTRODEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; ERBIUM; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; X RAY SPECTROMETERS; ZINC;

POTENTIOSTATICALLY ELECTRODEPOSITION; QUENCHING EFFECT;

POROUS SILICON;

EID: 0034427764     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<353::AID-PSSA353>3.0.CO;2-W     Document Type: Article

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