Porous silicon: A buffer layer for PbS heteroepitaxy

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 195-199

  Yakovtseva, V ^a   Vorozov, N ^a   Dolgyi, L ^a   Levchenko, V ^a   Postnova, L ^a   Balucani, M ^a   Bondarenko, V ^a   Lamedica, G ^a   Ferrara, V ^a   Ferrari, A ^a  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING LEAD COMPOUNDS; SURFACES;

EPITAXIAL FILMS; HETEROEPITAXIAL GROWTH;

POROUS SILICON;

EID: 0034427726     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. H. ZOGG, S. BLUNIER, A. FACH, C. MAISSEN, P. MULLER, S. TEODOROPOL, V. MEYER, G. KOSTORZ, A. DOMMANN, and T. RICHMOND, Phys. Rev. B 50, 10801 (1994).
2. M. WADA, M. SEKO, Y. SEKIGUCHI, and H. IWAOKA, US Patent No. 5189309.
3. S. LURYI and E. SUHIR, Appl. Phys. Lett. 49, 140 (1986).
4. N. SOBOLEV, G. TROYANOVA, V. BONDARENKO, A. BONDARENKO, A. DOROFEEV, T. PROKHORENKO, T. KOVYAZINA, N. SHLOPAK, A. KUTAS, and P. GAIDUK, Internat. Conf. Porous Semiconductors -Science and Technology. Mallorca (Spain), March 16 to 20, 1998 (p. 135), printed by RAYTON, Valencia (Spain).
5. T. LIN, L. SADWICH, K. WANG, Y. KAO, R. HULL, C. NIEH, and D. JAMIESON, Appl. Phys. Lett. 51, 814 (1987).
6. L. BELYAKOV, I. ZAKHAROVA, T. ZUBKOVA, S. MUSIKHIN, and S. RYKOV, Semiconductors 31, 76 (1997).
7. V. RAIKO, R. SPITZL, J. ENGERMANN, V. BORISENKO, and V. BONDARENKO, Diamond Relat. Mater. 5, 1063 (1996).
8. V. LEVCHENKO, L. POSTNOVA, V. BONDARENKO, N. VOROZOV, V. YAKOVTSEVA, and L. DOLGYI, Thin Solid Films 348, 141 (1999).
9. V. LEVCHENKO, L. POSTNOVA, V. DIKAREVA, T. CHERNAYA, and I. PULYAEVA, Inorg. Mater. 29, 1310 (1993).
10. A. FACH, J. JOHN, P. MULLER, G. PAGLINO, and H. ZOGG, Appl. Surf. Sci. 102, 346 (1996).