Study of the structure of porous silicon via positron annihilation experiments

Physica Status Solidi (A) Applied Research

Volumn 182, Issue 1, 2000, Pages 279-284

  Biasini, M ^a,b   Ferro, G ^a,b   Monge, M A ^a,c   Di Francia, G ^d   La Ferrara, V ^d  

^a ENEA   (Italy)

^b INFM   (Italy)

^c UNIVERSIDAD CARLOS III DE MADRID   (Spain)

^d ENEA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON POSITON ANNIHILATION RADIATION; POSITRON LIFETIME MEASUREMENTS; POSITRONIUM ATOM;

ATOMS; BAND STRUCTURE; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTALS; PHOTOLUMINESCENCE; PORE SIZE; RADIATION; SPECTROSCOPIC ANALYSIS; TWO DIMENSIONAL;

POROUS SILICON;

EID: 0034427469     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200011)182:1<279::AID-PSSA279>3.0.CO;2-4     Document Type: Article

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