Molecular beam epitaxy of InGaN/GaN heterostructures of green luminescence

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn , Issue , 2000, Pages 371-376

  Green, D S ^a   Heikman, S ^a   Heying, B ^a   Tavernier, P R ^a   Speck, J S ^a   Clarke, D R ^a   Den Baars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPOSITION; DENSITY (OPTICAL); DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; X RAY DIFFRACTION ANALYSIS;

GREEN LUMINESCENCE; INDIUM GALLIUM NITRIDE; MULTIPLE QUANTUM WELL; PHOTOLUMINESCENCE SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 0034425139     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)