X-ray study of Nd:YAG on (111)-oriented Si obtained by pulsed laser deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4412, Issue 1, 2001, Pages 396-399

  Rumianowski, Roman ^a   Dygdała, Roman S ^b   Rozploch, Franciszek ^b   Wojtowicz, Andrzej J ^b   Wiśniewska, Monika ^b   Kulesza, Sławomir ^b  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b NICOLAUS COPERNICUS UNIVERSITY   (Poland)

Author keywords

Pulsed laser deposition; Radioluminescence; XRD; Yttrium aluminium garnet

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DOPING (ADDITIVES); FILM PREPARATION; HEATING; LUMINESCENCE; NEODYMIUM; OPTOELECTRONIC DEVICES; PULSED LASER DEPOSITION; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

RADIOLUMINESCENCE SPECTROSCOPY; YTTRIUM ALUMINUM GARNET THIN FILMS;

YTTRIUM COMPOUNDS;

EID: 0034424712     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.435867     Document Type: Article

References (3)

1. An analytical model for three-dimensional laser plume expansion into vacuum in hydrodynamic regime
2. Crystal growth of Nd: YAG laser films on various substrates by pulsed laser deposition
3. X-ray characterisation of PbSe/Si layers grown by PLD method