A novel application of silicon microstrip technology for energy-dispersive EXAFS studies

Journal of Synchrotron Radiation

Volumn 7, Issue 4, 2000, Pages 221-228

  Iles, G ^a   Dent, A ^b   Derbyshire, G ^c   Farrow, R ^b   Hall, G ^a   Noyes, G ^c   Raymond, M ^a   Salvini, G ^b   Seller, P ^c   Smith, M ^c   Thomas, S ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b DARESBURY LABORATORY   (United Kingdom)

^c RUTHERFORD APPLETON LABORATORY   (United Kingdom)

Author keywords

EDE; Energy dispersive EXAFS; Microstrips; Silicon; X rays

Indexed keywords

EID: 0034396484     PISSN: 09090495     EISSN: None     Source Type: Journal    
DOI: 10.1107/S0909049500005240     Document Type: Article

References (16)

1. Allinson, N. M. (1989). Nucl. Instrum. Methods, A275, 587-596.
2. Allinson, N. M., Baker, G., Greaves, G. N. & Nicoll, J. K. (1988). Nucl. Instrum. Methods, A266, 592-597.
3. Bogg, D., Dent, A. J., Derbyshire, G. E., Farrow, R. C., Ramsdale, C. A. & Salvini, G. (1997). Nucl. Instrum. Methods, A392, 461-464.
4. Dent, A. (2000). Personal communication.
5. Derbyshire, G. E., Dobson, B. R., Greaves, G. N., Harris, P., Moore, P. R., Roberts, K. J., Allinson, N., Nicoll, J., Doyle, S. & Oldman, R. J. (1989). Rev. Sci. Instrum. 60(7), 1897-1900.
6. Dobson, B. (1997). Personal communication.
7. Fitting, H.-J. (1974). Phys. Status Solidi, A26, 525-535.
8. Hagelstein, M., San Miguel, A., Fontaine, A. & Goulon, J. (1997). J. Phys. IV (Colloque) 7, C2, 303-308.
9. Holmes-Siedle, A. & Adams, L. (1993). Handbook of Radiation Effects. Oxford University Press.
10. Holmes-Siedle, A., Robbins, M., Watts, S., Allport, P., Brenner, R., Moser, H.-G., Roe, S., Straver, J., Weilhammer, P., Chochula, P., Mikulec, I., Moszczynski, S., Turala, M., Dabrowski, W., Grybos, P., Idzik, M., Loukas, D., Misiakos, K., Siotis, I., Zachariadou, K., Dulinski, W., Michele, J., Schaeffer, M., Turchetta, R., Booth, P., Richardson, J., Smith, N., Gill, K., Hall, G., Sachdeva, R., Sotthibandhu, S., Vite, D., Wheadon, R., Arrighi, C., Delpierre, P., Habrard, M. C., Clemens, J. C., Mouthuy, T., Avset, B. S., Evensen, L., Hanneborg, A., Hansen, T. A., Bisello, D., Giraldo, A., Paccagnella, A., Kurchaninov, L., Spiriti, E., Apsimon, R., Giubellino, P., Ramello, L., Dasilva, W. L. P., Krammer, M. & Schuster, M. (1994). Nucl. Instrum. Methods, A339, 511-523.
11. Iles, G. (1998). PhD thesis, ICSTM, London, UK.
12. Koch, A., Hagelstein, M., San Miguel, A., Fontaine, A. & Ressler, T. (1995). Proc. SPIE, 2416, 85-93.
13. Lytle, F. W., Sayers, D. E. & Stern, E. A. (1982). Advances in X-ray Spectroscopy, edited by C. Bonnelle & C. Mande, pp. 267-286. Oxford: Pergamon Press.
14. McLean, F. B., Boesch, H. E. Jr & Oldham, T. R. (1989). Ionizing Radiation Effects in MOS Devices and Circuits, edited by T. P. Ma & P. V. Dressendorfer, pp. 87-192. New York: John Wiley and Sons.
15. Messenger, G. C. & Ash, M. S. (1986). The Effects of Radiation on Electronic Systems. New York: Van Nostrand Reinhold.
16. Sze, S. M. (1981). Physics of Semiconductor Devices, 2nd ed. New York: John Wiley and Sons.