Effect of Q-switch Gate Time on the Temporal and Spatial Behavior of an Intracavity Frequency-Doubled Diode-Pumped Nd:YAG Laser

Journal of the Korean Physical Society

Volumn 37, Issue 5 Part 2, 2000, Pages 739-743

  Moon, Hee Jong ^a   Yi, Jonghoon ^a   Rhee, Yongjoo ^a   Cha, Byungheon ^a   Lee, Jongmin ^a   Kim, Kwang Suk ^b  

^a Korea Atomic Energy Research Institute   (South Korea)

^b Golden Light Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034369174     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.37.739     Document Type: Article

References (14)

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