Computational analysis of the vertical Bridgman growth of Te doped GaSb under microgravity

Chinese Physics Letters

Volumn 17, Issue 10, 2000, Pages 775-777

  Liu, Yong Cai ^a,b   Chen, Wan Chun ^a,c   Ge, Pei Wen ^a   Huo, Chong Ru ^a  

^a INSTITUTE OF PHYSICS   (China)

^b TIANJIN UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FINITE ELEMENT METHOD; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; TELLURIUM; TELLURIUM COMPOUNDS; TRANSIENT ANALYSIS;

BRIDGMAN GROWTH; COMPUTATIONAL ANALYSIS; CONDITION; GROWTH INTERFACE SHAPE; GROWTH INTERFACES; GROWTH PROCESS; INITIAL SHAPE; MELT GROWTH; RADIAL SEGREGATION; SOLUTE CONCENTRATIONS;

ANTIMONY COMPOUNDS;

EID: 0034367920     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/17/10/027     Document Type: Article

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