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Volumn , Issue 12, 2000, Pages 1420-1421

Observation of highly stable radical anions of ladder oligosilanes

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EID: 0034345713     PISSN: 03667022     EISSN: None     Source Type: Journal    
DOI: 10.1246/cl.2000.1420     Document Type: Article
Times cited : (12)

References (44)
  • 22
  • 24
    • 0002234991 scopus 로고
    • ed. by S. Patai and Z. Rappoport, Wiley, Chichester Chap. 19
    • c) R. West, in "The Chemistry of Organic Silicon Compounds," ed. by S. Patai and Z. Rappoport, Wiley, Chichester (1989), Chap. 19.
    • (1989) The Chemistry of Organic Silicon Compounds
    • West, R.1
  • 40
    • 0001310102 scopus 로고
    • • generated by pulse radiolysis and γ-irradiation does not exhibit any distinct absorption bands in the 300-600-nm region but shows absorption in the near-infrared region. See, a) H. Ban, K. Sukegawa, and S. Tagawa, Macromolecules, 20, 1775 (1987).
    • (1987) Macromolecules , vol.20 , pp. 1775
    • Ban, H.1    Sukegawa, K.2    Tagawa, S.3
  • 44
    • 0000415779 scopus 로고
    • Another explanation of the SOMO is π-bonding between the silicon ring atoms and silicon-substituent antibonding. See, R. S. Grev and H. F. Schaefer, III, J. Am. Chem. Soc., 109, 6569 (1987).
    • (1987) J. Am. Chem. Soc. , vol.109 , pp. 6569
    • Grev, R.S.1    Schaefer H.F. III2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.