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Volumn 26, Issue 1, 2000, Pages 54-55

p-GaSe-n-recrystallized InSe heterojunctions

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Indexed keywords


EID: 0034343189     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262739     Document Type: Article
Times cited : (3)

References (11)
  • 4
    • 0017243428 scopus 로고
    • D. B. Anan'ina, V. L. Bakumenko, L. N. Kurbatov, and V. F. Chishko, Fiz. Tekh. Poluprovodn. 10, 2373 (1976) [Sov. Phys. Semicond. 10, 1405 (1976)].
    • (1976) Sov. Phys. Semicond. , vol.10 , pp. 1405
  • 7
    • 0002295770 scopus 로고    scopus 로고
    • I. V. Alekseev, Fiz. Tekh. Poluprovodn. 32, 588 (1998) [Sov. Phys. Semicond. 32, 526 (1998)].
    • (1998) Sov. Phys. Semicond. , vol.32 , pp. 526
  • 9
    • 18744373690 scopus 로고
    • V. L. Bakumenko and V. F. Chishko, Fiz. Tekh. Poluprovodn. 11, 2000 (1977) [Sov. Phys. Semicond. 11, 1171 (1977)].
    • (1977) Sov. Phys. Semicond. , vol.11 , pp. 1171


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.