Formation of a two-sided porous structure during electrochemical silicon etching by the Unno-Imai method

Technical Physics Letters

Volumn 26, Issue 1, 2000, Pages 12-14

  Zimin, S P ^a,b   Preobrazhenskii, M N ^a,b   Zimin, D S ^a,b  

^a YAROSLAVL STATE UNIVERSITY   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034343149     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1262723     Document Type: Article

References (7)

1. Materials of the International Conference "Porous Semiconductors - Science and Technology" (Mallorca, Spain, 1998).
2. K. Imai and H. Unno, IEEE Trans. Electron. Dev. ED-31, 297 (1984).
3. H. Foll, Appl. Phys. A 53, 8 (1991).
4. R. J. M. Da Fonseca, J. M. Saurel, A. Foucaran, et al., Thin Solid Films 225, 155 (1995).
5. R. D. Weiglein, IEEE Trans. SU-32 (2), 225 (1985).
6. V. Lehmann, J. Electrochem. Soc. 140, 2836 (1993).
7. S. P. Zimin, M. N. Preobrazhenskiǐ, and D. S. Zimin, in Proceedings of V International Conference on High Technologies in Russian Industry (Moscow, Russia, 1999), p. 225.