Effect of pressure and anionic substitution on the electrical properties of HgTeS crystals

Physics of the Solid State

Volumn 42, Issue 2, 2000, Pages 215-223

  Shchennikov, V V ^a   Kar'kin, A E ^a   Gavaleshko, N P ^a   Frasunyak, V M ^a  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034343038     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1131149     Document Type: Article

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