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Volumn 42, Issue 7, 2000, Pages 1228-1230

Electrical properties of (PbS)0.59TiS2 crystals at high pressure up to 20 GPa

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EID: 0034342308     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1131368     Document Type: Article
Times cited : (3)

References (24)
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    • I. M. Tsidil'kovskiǐ, V. V. Shchennikov, and N. G. Gluzman, Fiz. Tekh. Poluprovodn. (Leningrad) 17, 958 (1983) [Sov. Phys. Semicond. 17, 604 (1983)].
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    • G. V. Lashkarev, A. V. Brodovoǐ, M. V. Radchenko, et al., Fiz. Tverd. Tela (Leningrad) 32, 980 (1990) [Sov. Phys. Solid State 32, 577 (1990)].
    • (1990) Sov. Phys. Solid State , vol.32 , pp. 577
  • 16
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    • A. A. Semerchan, N. N. Kuzin, L. N. Drozdova, et al., Dokl. Akad. Nauk SSSR 152, 1079 (1963) [Sov. Phys. Dokl. 8, 982 (1963)].
    • (1963) Sov. Phys. Dokl. , vol.8 , pp. 982
  • 18
    • 0002011773 scopus 로고
    • N. B. Brandt, D. V. Gitsu, N. S. Popovich, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 10 (1), 194 (1976) [Sov. Phys. Semicond. 10, 117 (1976)].
    • (1976) Sov. Phys. Semicond. , vol.10 , pp. 117


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.