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Volumn 42, Issue 7, 2000, Pages 1222-1227

Effect of excitation intensity and electric field on the photoconductivity relaxation in CdxHg1-xTe/GaAs polycrystalline layers

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Indexed keywords


EID: 0034342247     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1131367     Document Type: Article
Times cited : (1)

References (16)
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    • A. I. Vlasenko and A. V. Lyubchenko, Fiz. Tekh. Poluprovodn. (S.-Peterburg) 28, 1219 (1994) [Semiconductors 28, 695 (1994)].
    • (1994) Semiconductors , vol.28 , pp. 695
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    • V. I. Ivanov-Omskiǐ, V. K. Ogorodnikov, and T. Ts. Totieva, Fiz. Tekh. Poluprovodn. (Leningrad) 14, 699 (1980) [Sov. Phys. Semicond. 14, 412 (1980)].
    • (1980) Sov. Phys. Semicond. , vol.14 , pp. 412
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    • A. Ya. Shik, Zh. Éksp. Teor. Fiz. 68, 1859 (1975) [Sov. Phys. JETP 41, 932 (1975)].
    • (1975) Sov. Phys. JETP , vol.41 , pp. 932
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    • A. I. Elizarov, V. I. Ivanov-Omskiǐ, A. A. Korniyash, and V. A. Petryakov, Fiz. Tekh. Poluprovodn. (Leningrad) 18, 201 (1984) [Sov. Phys. Semicond. 18, 125 (1984)].
    • (1984) Sov. Phys. Semicond. , vol.18 , pp. 125


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.