Influence of the oxygen partial pressure on the opto-electrical properties of ZnO thin films deposited by reactive evaporation

Physica Status Solidi (B) Basic Research

Volumn 220, Issue 1, 2000, Pages 293-297

  Gordillo, G ^a   Olarte, J ^a   Calderon C ^a  

^a UNIVERSIDAD NACIONAL DE COLOMBIA   (Colombia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034341745     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200007)220:1<293::AID-PSSB293>3.0.CO;2-L     Document Type: Article

References (5)

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2. W. JEONG, Y. IM, G. PARK, H. CHUNG, C. KIM, and H. PARK, Proc. 2nd World Conf. PVSEC, Vienna (Austria) Ed. Europ. Commission, Ispra (Italy) 1998 (p. 747).
3. R. BATH, C. S. FEREKIDES, and D. L. MOREL, Proc. 26th IEEE PVSC, Anaheim (USA), IEEE, New York 1997 (p. 383).
4. J. KESSLER, M. RUCK, D. HARISKOS, U. RUHLE, R. MENNER, and H. W. SCHOCK, 23rd IEEE PVSC, Lousville (USA), IEEE, New York 1993 (p. 447).
5. G. GORDILLO, C. CALDERÓN, J. OLARTE, J. SANDINO, and H. MÉNDEZ, see [2] (p. 750).