Peculiarities of the microwave magnetoresistance of compensated Ge:As near the metal-insulator transition

Physica Status Solidi (B) Basic Research

Volumn 218, Issue 1, 2000, Pages 189-192

  Veinger, A I ^a   Zabrodskii, A G ^a   Tisnek, T V ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034340663     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-3951(200003)218:1<189::aid-pssb189>3.0.co;2-4     Document Type: Article

References (5)

1. A.I. VEINGER, A.G. ZABRODSKII, T.V. TISNEK, and G. BISKUPSKI, Semicond. 32, 497 (1998).
2. A.G. ZABRODSKII, Fiz. Tekh. Poluprov. 14, 1130 (1980).
3. A.G. ZABRODSKII and K.N. ZINOVEVA, Soviet Phys. - J. Exper. Theor. Phys. 59, 425 (1984).
4. B.L. ALTSHULER and A.G. ARONOV, in: Modern Problems in Condensed Matter Sciences, Vol. 10: Electron-Electron Interaction in Disordered Systems, Eds. V.M. AGRANOVICH and A.A. MARADUDIN, North-Holland Publ. Co., Amsterdam 1985.
5. T.A. POLYANSKAYA and Yu.V. SHMARTSEV, Soviet Phys. - Semicond. 23, 1 (1989).