Crossover from hopping to diffusive transport with increasing gate voltage in Poly-Si MOS inversion layer

Physica Status Solidi (B) Basic Research

Volumn 218, Issue 1, 2000, Pages 89-92

  Ishida, S ^a   Oto, K ^b   Takaoka, S ^b   Murase, K ^b   Serikawa, T ^c  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034340592     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(200003)218:1<89::AID-PSSB89>3.0.CO;2-9     Document Type: Article

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