Time-dependent development of the Coulomb gap

Physica Status Solidi (B) Basic Research

Volumn 218, Issue 1, 2000, Pages 35-38

  Yu, C C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034340566     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(200003)218:1<35::AID-PSSB35>3.0.CO;2-6     Document Type: Article

References (9)

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3. An excellent review is B. I. SHKLOVSKII and A. L. EFROS, Electronic Properties of Doped Semiconductors, Spinger-Verlag, Berlin/Heidelberg/New York 1984, and references therein.
4. Z. OVADYAHU and M. POLLAK, Phys. Rev. Lett. 79, 459 (1997).
5. A. VAKNIN, Z. OVADYAHU, and M. POLLAK, Phys. Rev. Lett. 81, 669 (1998).
6. G. MARTINEZ-ARIZALA et al., Phys. Rev. B 57, R670 (1998).
7. C. C. YU, Phys. Rev. Lett. 82, 4074 (1999).
8. S. D. BARANOVSKII, B. I. SHKLOVSKII, and A. L. ÈFROS, Soviet Phys. - J. Exper. Theor. Phys. 51, 199 (1980).
9. A. L. BURIN, J. Low-Temp. Phys. 100, 309 (1995).