Characterization of the hole capacitance of a hydrogenated amorphous silicon thin-film transistor

Journal of the Korean Physical Society

Volumn 37, Issue 3, 2000, Pages 272-277

  Park, Hyuk Ryeol ^a   Lee, Suk Ho ^a   Ryu, Jaiil ^b   Jang, Jin ^b  

^a Mokpo National University   (South Korea)

^b Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034338010     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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