Defect structure development in electron-irradiated Cu-based Si, Ge and Sn binary alloys

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 80, Issue 11, 2000, Pages 2567-2590

  Satoh, Y ^a   Yoshiie, T ^a   Ishida, I ^b   Kiritani, M ^c  

^a KYOTO UNIVERSITY   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

^c HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; COPPER ALLOYS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON IRRADIATION; ELECTRON MICROSCOPY; GERMANIUM; SILICON; STACKING FAULTS; THERMAL EFFECTS; TIN;

DEFECT CLUSTERS; DEFECT STRUCTURE; HIGH VOLTAGE ELECTRON MICROSCOPE; LOOP NUMBER DENSITY; SEGREGATED SOLUTE ELEMENTS;

BINARY ALLOYS;

EID: 0034334920     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418610008216493     Document Type: Article

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