SCOPUS 정보 검색 플랫폼

Journal of Crystal Growth

Volumn 219, Issue 4, 2000, Pages 335-345

Measurement of layer width uniformity in quantum well infrared photodetectors by high resolution X-ray techniques

(3) Pan, Janet L a,b Fonstad Jr , Clifton G b Matney, Kevin c

a YALE UNIVERSITY (United States)

b USA (United States)

c Bede Scientific Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT REFLECTION; REFRACTIVE INDEX; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

GLANCING INCIDENCE X RAY REFLECTIVITY (GIXR);

INFRARED DETECTORS;

EID: 0034325982 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(00)00625-4 Document Type: Article

Times cited : (2)

References (16)

1
- 0027687152
- Levine B.F. J. Appl. Phys. 74:1993;R1-R81.
- (1993) J. Appl. Phys. , vol.74
- Levine, B.F.¹

2
- 85031558625
- private communication
- R. Martin, private communication.
- Martin, R.¹

3
- 85031558197
- Bede Scientific Unpublished Internal Report
- M. Wormington, D.K. Bowen, Simulation of grazing incidence X-ray techniques, Bede Scientific Unpublished Internal Report, 1996.
- (1996) Simulation of Grazing Incidence X-ray Techniques
- Wormington, M.¹ Bowen, D.K.²

4
- 26144449160
- Parratt L.G. Phys. Rev. 95:1954;359.
- (1954) Phys. Rev. , vol.95 , pp. 359
- Parratt, L.G.¹

5
- 85031565243
- Bede Scientific Incorporated, Englewood, CO
- M. Wormington, GIXR v2.5 - Glancing incidence X-ray reflectivity dynamical simulations, Bede Scientific Incorporated, Englewood, CO, 1995.
- (1995) GIXR V2.5 - Glancing Incidence X-ray Reflectivity Dynamical Simulations
- Wormington, M.¹

6
- 0001143545
- Bowen D.K., Wormington M. Adv. X-ray Anal. 36:1993;171.
- (1993) Adv. X-ray Anal. , vol.36 , pp. 171
- Bowen, D.K.¹ Wormington, M.²

7
- 85031558027
- Bede Scientific Incorporated, Englewood, CO, Englewood, Co
- Bede Scientific Incorporated, Englewood, CO, Reflection and Fluorescence Simulations (REFS-MERCURY) software, Englewood, Co, 1999.
- (1999) Reflection and Fluorescence Simulations (REFS-MERCURY) Software

8
- 0000655384
- Fewster P.F. J. Appl. Cryst. 21:1988;524.
- (1988) J. Appl. Cryst. , vol.21 , pp. 524
- Fewster, P.F.¹

9
- 0022562179
- Fewster P.F. Philips J. Res. 41:1986;268.
- (1986) Philips J. Res. , vol.41 , pp. 268
- Fewster, P.F.¹

10
- 0002308620
- in: G. Bauer (Ed.) Springer, New York
- A. Krost, in: G. Bauer (Ed.) Optical Characteristics of Epitaxial Semiconductor Layers, Springer, New York, 1996, p. 287.
- (1996) Optical Characteristics of Epitaxial Semiconductor Layers , pp. 287
- Krost, A.¹

11
- 0023043005
- Miceli P.F., Neumann D.A., Zabel H. Appl. Phys. Lett. 48:1986;24.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 24
- Miceli, P.F.¹ Neumann, D.A.² Zabel, H.³

12
- 0342584137
- Krol A., Resat H., Sher C.J., Woronick S.C., Ng W., Kao Y.H., Cole T.L., Green .K., Lowe-Ma C.K., Nee T.-W, Rehn V. J. Appl. Phys. 69:1991;949.
- (1991) J. Appl. Phys. , vol.69 , pp. 949
- Krol, A.¹ Resat, H.² Sher, C.J.³ Woronick, S.C.⁴ Ng, W.⁵ Kao, Y.H.⁶ Cole, T.L.⁷ Green, K.⁸ Lowe-Ma, C.K.⁹ Nee, T.-W.¹⁰ Rehn, V.¹¹

13
- 0042903083
- Matney K., Goorsky M.S. J. Crystal Growth. 148:1995;327.
- (1995) J. Crystal Growth , vol.148 , pp. 327
- Matney, K.¹ Goorsky, M.S.²

14
- 0003745617
- Springer, New York
- M.A. Hermann, H. Sitter, Molecular Beam Epitaxy, Springer, New York, 1989, pp. 303-305.
- (1989) Molecular Beam Epitaxy , pp. 303-305
- Hermann, M.A.¹ Sitter, H.²

15
- 0026413292
- Vlcek J.C., Fonstad C.G. J. Crystal Growth. 111:1991;56.
- (1991) J. Crystal Growth , vol.111 , pp. 56
- Vlcek, J.C.¹ Fonstad, C.G.²

16
- 0018432179
- Iida A., Kohra K. Phys. Stat. Sol. A. 51:1979;533.
- (1979) Phys. Stat. Sol. a , vol.51 , pp. 533
- Iida, A.¹ Kohra, K.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.