Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures

Solid-State Electronics

Volumn 44, Issue 11, 2000, Pages 2021-2025

  Wei, Jianlin ^a   Mao, Lingfeng ^a   Xu, Mingzhen ^a   Tan, Changhua ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; HOLE TRAPS; INTERFACES (MATERIALS); RELAXATION PROCESSES; SPECTROSCOPIC ANALYSIS; ULTRATHIN FILMS;

DIRECT TUNNELING RELAXATION SPECTROSCOPY; ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 0034322721     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00137-4     Document Type: Article

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