Electrical properties of a bismuth layer-structured Ba2Bi4Ti5O18 single crystal

Journal of the American Ceramic Society

Volumn 83, Issue 11, 2000, Pages 2699-2704

  Irie, Hiroshi ^a   Miyayama, Masaru ^b   Kudo, Tetsuichi ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; BARIUM; BISMUTH; FERROELECTRIC MATERIALS; FERROELECTRICITY; OXYGEN; PERMITTIVITY; SINGLE CRYSTALS; TITANIUM;

BISMUTH LAYER-STRUCTURED FERROELECTRIC (BLSF) MATERIALS; ELECTRICAL ANISOTROPY;

BARIUM COMPOUNDS;

EID: 0034321266     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2000.tb01619.x     Document Type: Article

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