Anisotropic grain growth in α-Al2O3 with SiO2 and TiO2 additions

Journal of the American Ceramic Society

Volumn 83, Issue 11, 2000, Pages 2848-2851

  Kebbede, Anteneh ^a,b   Parai, John ^a,c   Carim, Altaf H ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b GE GLOBAL RESEARCH   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANISOTROPY; ASPECT RATIO; CRYSTAL MICROSTRUCTURE; DOPING (ADDITIVES); FRACTURE TOUGHNESS; GRAIN BOUNDARIES; GRAIN GROWTH; SINTERING; X RAY SPECTROSCOPY;

ANISOTROPIC GRAIN GROWTH;

ALUMINA;

EID: 0034319677     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2000.tb01642.x     Document Type: Article

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