Characterization of extreme ultraviolet lithography mask defects from extreme ultraviolet far-field scattering patterns

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2930-2934

  Yi, Moonsuk ^a   Jeong, Seongtae ^a   Rekawa, Seno ^a   Bokor, Jeffrey ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; CRYSTAL DEFECTS; IMAGING TECHNIQUES; LIGHT SCATTERING; MASKS; MULTILAYERS; SILICON WAFERS; ULTRAVIOLET RADIATION;

DARK FIELD SCATTERING; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

PHOTOLITHOGRAPHY;

EID: 0034317534     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319843     Document Type: Article

References (8)

1. See, Y. Vladimirsky, Proc. SPIE 3676 (1999).
2. P. Yan, S. Yan, G. Zhang, J. Richards, P. Kofron, and J. Chow, Proc. SPIE 3546, 206 (1998).
3. K. Nguyen, Ph.D. dissertation, University of California, Berkeley, CA, 1994.
4. Y. Lin and J. Bokor, J. Vac. Sci. Technol. B 15, 2467 (1997).
5. A. K. Ray-Chauduri, G. Cardinale, A. Fisher, P.-Y. Yan, and D. W. Sweeney, J. Vac. Sci. Technol. B 17, 3024 (1999).
6. S. Jeong, L. Johnson, S. Rekawa, C. C. Walton, S. T. Prisbrey, E. Tejnil, J. H. Underwood, and J. Bokor, J. Vac. Sci. Technol. B 17, 3009 (1999).
7. S. Jeong, M. Idir, Y. Lin, L. Johnson, S. Rekawa, M. Jones, P. Denham, P. Batson, R. Levesque, P. Kearney, P. Yan, E. Gullikson, J. H. Underwood, and J. Bokor, J. Vac. Sci. Technol. B 16, 3430 (1998).
8. S. Jeong, M. Idir, L. Johnson, Y. Lin, P. Batson, R. Levesque, P. Kearney, P. Y. Yan, E. Gullikson, J. H. Underwood, and J. Bokor, Proc. SPIE 3546, 524 (1998).