Influence of off-set energy on the electrical characteristics of Si resonant tunneling MOST (SRTMOST)

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 407-412

  Matsuo, Naoto ^a   Kitagawa, Yasunori ^a   Takami, Yoshinori ^a   Yamauchi, Junya ^a   Hamada, Hiroki ^b   Miyoshi, Tadaki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; DIELECTRIC PROPERTIES; RESONANT TUNNELING; SEMICONDUCTING SILICON; SUBSTRATES; VOLTAGE MEASUREMENT;

GATE OFF CURRENTS; OFF SET ENERGY; TRANSITION TIME; TRANSMISSION COEFFICIENT;

MOSFET DEVICES;

EID: 0034316940     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0941     Document Type: Article

References (7)

1. H. Kawaura, T. Sakamoto, T. Baba.
2. Matsuo N., Miura T., Hamada H., Miyoshi T. Trans. IEICE. 81:1998;266.
3. Matsuo N., Miura T., Yamauchi J., Hamada H., Miyoshi T. Trans. IEICE. 82:1999;131.
4. Matsuo N., Yamauchi J., Kitagawa Y., Hamada H., Miura T., Miyoshi T. Si Nanoelectronics Workshop Abst. 1999;. p. 54-55.
5. Omura Y. Perspective, Science and Technology for Novel Silicon on Insulator Devices. 1999;Kluwer Academic Publishers. p. 257.
6. Sakai T., Murakami K., Kawachi T. Ext. Abst., The Japan Society of Applied Physics. 3p-k-9:2000;672.
7. Matsuo N., Miura T., Urakami A., Miyoshi T. Japan. J. Appl. Phys. 38:1999;3967.