Depth of field at high magnifications of scanning electron microscopes

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 3047-3051

  Sato, Mitsugu ^a   Mizuno, Fumio ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; ELECTRON DIFFRACTION; OPTICAL SYSTEMS; SIGNAL TO NOISE RATIO;

DEPTH OF FIELDS (DOF);

SCANNING ELECTRON MICROSCOPY;

EID: 0034316075     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1319840     Document Type: Article

References (4)

1. Scanning Electron Microscopy and X-ray Microanalysis, edited by J. I. Goldstein, D. E. Newbury, P. Echlin, D. C. Joy, C. Fiori, and E. Lifshin (Plenum, New York, 1981), pp. 133-136.
2. M. Sato, H. Todokoro, and M. Nakagawa, J. Electron Microsc. 43, 141 (1994).
3. Handbook of Charged Particle Optics, edited by J. Orloff (CRC, New York, 1997), pp. 319-361.
4. International Technology Roadmap for Semiconductors (1999).