Electron transport across bulk (AlxGa1-x)0.5In0.5P barriers determined from the I-V characteristics of n-i-n diodes measured between 60 and 310 K

IEEE Journal of Quantum Electronics

Volumn 36, Issue 11, 2000, Pages 1293-1298

  Morrison, A P ^d   Lambkin, J D ^a   Van Der Poel, C J ^b   Valster, A ^c  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c Uniphase Netherlands BV   (Netherlands)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ENERGY GAP; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; TEMPERATURE MEASUREMENT; THERMIONIC EMISSION;

FOWLER-NORDHEIM TUNNELING; INTRINSIC BARRIER REGIONS; SEMICONDUCTING ALUMINUM GALLIUM INDIUM PHOSPHIDE; SEMICONDUCTING GALLIUM INDIUM PHOSPHIDE;

SEMICONDUCTOR LASERS;

EID: 0034314229     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.890277     Document Type: Article

References (13)

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