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Volumn 31, Issue 9, 2000, Pages 753-758

Electro-thermal analysis of paralleled bipolar devices

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; INTEGRATED CIRCUIT LAYOUT; NONLINEAR NETWORK ANALYSIS; NONLINEAR NETWORK SYNTHESIS; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMIC STABILITY;

EID: 0034301907     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00055-0     Document Type: Article
Times cited : (5)

References (8)
  • 4
    • 0032660225 scopus 로고    scopus 로고
    • Exploiting electro-thermal resonance in high voltage power bipolar devices
    • D'Amore D., Maffezzoni P. Exploiting electro-thermal resonance in high voltage power bipolar devices. IEE Electronics Letters. 35:(7):1999;600-602.
    • (1999) IEE Electronics Letters , vol.35 , Issue.7 , pp. 600-602
    • D'Amore, D.1    Maffezzoni, P.2
  • 6
    • 0342652916 scopus 로고    scopus 로고
    • Simple model for thermal spreading impedance
    • Tallinn, Estonia, Oct
    • T. Veijola, Simple model for thermal spreading impedance, Baltic Electronics Conference, Tallinn, Estonia, Oct 1996.
    • (1996) Baltic Electronics Conference
    • Veijola, T.1
  • 7
    • 85031573120 scopus 로고    scopus 로고
    • A new diode model formulation for electro-thermal analysis
    • Orlando (FL), June
    • D. D'Amore, P. Maffezzoni, A new diode model formulation for electro-thermal analysis, Proc. ISCAS, Orlando (FL), June 1999.
    • (1999) Proc. ISCAS
    • D'Amore, D.1    Maffezzoni, P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.