Quantum well intermixing of In1-xGaxAs/InP and In1-xGaxAs/In1-xGaxAs1-yPy multiple-quantum-well structures by using the impurity-free vacancy diffusion technique

Semiconductor Science and Technology

Volumn 15, Issue 10, 2000, Pages 1005-1009

  Kim, Hyun Soo ^a   Park, Jeong Woo ^b   Oh, Dae Kon ^c   Oh, Kwang Ryong ^c   Kim, Sung June ^b   Choi, In Hoon ^a  

^a Korea University   (South Korea)

^b Seoul National University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL IMPURITIES; INTERDIFFUSION (SOLIDS); PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICA; STRAIN; THERMAL EXPANSION; THERMODYNAMIC STABILITY;

MULTIPLE-QUANTUM-WELLS (MQW); QUANTUM WELL INTERMIXING (QWI); VACANCY DIFFUSION TECHNIQUE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034299271     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/10/314     Document Type: Article

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