On a possibility of high-resolution characterization of InGaAs/GaAs multilayers using phase-retrieval X-ray diffractometry technique

Journal of Physics D: Applied Physics

Volumn 33, Issue 20, 2000, Pages 2521-2526

  Nikulin, A Y ^a   Siu, K ^a   Davis, J R ^a   Usher, B F ^b  

^a MONASH UNIVERSITY   (Australia)

^b LA TROBE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SINGLE CRYSTALS; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

PHASE-RETRIEVAL X RAY DIFFRACTOMETRY METHOD; POLYCHROMATIC REGIONS; X RAY BRAGG DIFFRACTION METHOD;

MULTILAYERS;

EID: 0034298104     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/33/20/301     Document Type: Article

References (8)

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