Effects of monolithic silicon postulated as an isotropic material on design of microstructures

Sensors and Actuators, A: Physical

Volumn 86, Issue 1-2, 2000, Pages 108-114

  Chen, Gin Shin ^a   Ju, Ming Shaung ^a   Fang, Yean Kuen ^b  

^a Man Machine System Laboratory   (Taiwan)

^b Dept Elec Eng Natl Cheng K   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CAPACITANCE; COMPUTER SIMULATION; ELECTRIC RESISTANCE; FINITE ELEMENT METHOD; MICROSTRUCTURE; PIEZOELECTRIC DEVICES; PRESSURE EFFECTS; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS; STRESS ANALYSIS; THERMAL EXPANSION;

DISPLACEMENT DISTRIBUTION; HUBER MISES CRITERION; MICROPRESSURE SENSORS; MONOLITHIC SILICON; VON MISES CRITERION;

MICROSENSORS;

EID: 0034297579     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00436-2     Document Type: Article

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