Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography

Sensors and Actuators, A: Physical

Volumn 86, Issue 1-2, 2000, Pages 122-126

  Hu, Junmin ^a   Deng, Tao ^a   Beck, Rex G ^b   Westervelt, Robert M ^b   Maranowski, Kevin D ^c   Gossard, Arthur C ^c   Whitesides, George M ^a  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT VOLTAGE CHARACTERISTICS; GATES (TRANSISTOR); LITHOGRAPHY; PHASE SHIFT; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

MICROFABRICATION; NEAR FIELD CONFORMAL PHASE SHIFT LITHOGRAPHY; SOFT LITHOGRAPHY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034295816     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00435-0     Document Type: Article

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