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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 10, 2000, Pages 5732-5736

Atomic-layer epitaxy of silicon on (100) surface

(4) Satoh, Yasuo a Ikeda, Keiji a Sugahara, Satoshi a Matsumura, Masakiyo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; ETCHING; FILM GROWTH; MORPHOLOGY; SURFACE ROUGHNESS; SURFACES;

ADSORBATES; ATOMIC LAYER EPITAXY; SURFACE MIGRATION;

SEMICONDUCTING SILICON;

EID: 0034291928 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.5732 Document Type: Article

Times cited : (4)

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