Indirect-to-direct transition of (AlAs)n/(AlP)n strained short-period superlattices

Japanese journal of applied physics

Volumn 39, Issue 10 A, 2000, Pages

  Ohnuma, Toshiharu ^a   Nagano, Masahiro ^a   Nemoto, Koshichi ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; OPTICAL PROPERTIES; PHASE TRANSITIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS;

FIRST PRINCIPLES CALCULATION; INDIRECT TO DIRECT TRANSITION; MATRIX ELEMENTS; STRAINED SHORT PERIOD SUPERLATTICE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0034291548     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l972     Document Type: Article

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