Physical basis for high-power semiconductor nanosecond opening switches

IEEE Transactions on Plasma Science

Volumn 28, Issue 5, 2000, Pages 1540-1544

  Grekhov, Igor V ^a   Mesyats, Gennady A ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b INSTITUTE OF ELECTROPHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC GENERATORS; PLASMAS; SEMICONDUCTOR JUNCTIONS;

HIGH POWER SEMICONDUCTOR NANOSECOND OPENING SWITCHES; JUNCTION RECOVERY; SILICON OPENING SWITCH;

SEMICONDUCTOR SWITCHES;

EID: 0034289964     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/27.901229     Document Type: Article

References (5)