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Physica Status Solidi (A) Applied Research

Volumn 181, Issue 1, 2000, Pages 83-90

Relative abundance of single and vacancy-bonded substitutional nitrogen in CVD diamond

(6) Vlasov, I I a Ralchenko, V G a Khomich, A V b Nistor, S V c,d Shoemaker, D d Khmelnitskii, R A e

a PROKHOROV GENERAL PHYSICS INSTITUTE (Russian Federation)

b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS (Russian Federation)

c NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

d UNIVERSITY OF ANTWERP (Belgium)

e LEBEDEV PHYSICAL INSTITUTE (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; CRYSTAL LATTICES; ELECTRON IRRADIATION; ELECTRON SPIN RESONANCE SPECTROSCOPY; FILM GROWTH; INFRARED SPECTROSCOPY; NITROGEN; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY;

FILM THICKNESS; MICRO PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY;

DIAMOND FILMS;

EID: 0034276302 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/1521-396X(200009)181:1<83::AID-PSSA83>3.0.CO;2-6 Document Type: Article

Times cited : (19)

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