Hydrogen plasma etching method for depth analysis by X-ray photoelectron spectroscopy

Surface and Interface Analysis

Volumn 29, Issue 9, 2000, Pages 596-601

  Iijima, Yoshitoki ^a   Tazawa, Toyohiko ^a   Sato, Kazuomi ^b   Oshima, Mitsuyoshi ^b   Hiraoka, Kenzo ^c  

^a JEOL LTD   (Japan)

^b SHIN ETSU CHEMICAL CO LTD   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BENZENE; CHEMICAL BONDS; ELECTRIC DISCHARGES; ELECTRODES; HYDROGEN; ION BEAMS; PHOTORESISTS; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILING;

PLASMA ETCHING;

EID: 0034275650     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200009)29:9<596::AID-SIA904>3.0.CO;2-H     Document Type: Article

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