Operation threshold of a double barrier phonon laser

Solid State Communications

Volumn 116, Issue 4, 2000, Pages 191-196

  Camps, I ^a,b   Makler, S S ^b,c  

^a UNIVERSITY OF HAVANA   (Cuba)

^b FLUMINENSE FEDERAL UNIVERSITY   (Brazil)

^c STATE UNIVERSITY OF RIO DE JANEIRO   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

EQUATIONS OF MOTION; HETEROJUNCTIONS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; ORDER DISORDER TRANSITIONS; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ANHARMONICITY; DOUBLE-BARRIER HETEROSTRUCTURES (DBH); HAMILTONIAN SYSTEMS; LANGEVIN EQUATIONS; PHONON LASERS;

SEMICONDUCTOR LASERS;

EID: 0034275450     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00312-4     Document Type: Article

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