Nucleation and growth of diamond films on aluminum nitride by hot filament chemical vapor deposition

Diamond and Related Materials

Volumn 9, Issue 9, 2000, Pages 1660-1663

  Wang, W L ^a   Zhang, R Q ^b   Liao, K J ^b   Sun, Y W ^a   Wang, B B ^a  

^a CHONGQING UNIVERSITY   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CHEMICAL VAPOR DEPOSITION; COATINGS; DENSITY (OPTICAL); FILM GROWTH; MAGNETRON SPUTTERING; NITRIDES; NUCLEATION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; TUNGSTEN CARBIDE;

ALUMINUM NITRIDE; HOT FILAMENT CHEMICAL VAPOR DEPOSITION; NUCLEATION DENSITY; SCRATCH TEST;

DIAMOND FILMS;

EID: 0034274947     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00321-6     Document Type: Article

References (14)