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Volumn 9, Issue 9, 2000, Pages 1561-1568
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Highly efficient electron emitting diode fabricated with single-crystalline diamond
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
ELECTRIC FIELD EFFECTS;
ELECTRON EMISSION;
ELECTRON ENERGY LEVELS;
EPITAXIAL GROWTH;
OXIDATION;
PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR DIODES;
SINGLE CRYSTALS;
SURFACES;
CHEMICAL BONDS;
CHEMICAL REACTIONS;
CRYSTAL STRUCTURE;
DIAMOND FILMS;
ELECTRONIC PROPERTIES;
GROWTH (MATERIALS);
MAGNETIC PROPERTIES;
MECHANICAL PROPERTIES;
OPTICAL PROPERTIES;
SEMICONDUCTING DIAMONDS;
SPECTROSCOPY;
TEMPERATURE;
BAND EDGE EMISSION;
ELECTRON EMITTING DIODE;
HIGH CURRENT EFFICIENCY;
HOMOEPITAXIAL DIAMOND;
MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;
SURFACE OXIDATION;
TOTAL PHOTOELECTRON YIELD;
DIAMOND FILMS;
MATERIALS SCIENCE;
DC ARC PLASMA JET METHOD;
DIAMOND LIKE CARBONS;
EIREV;
ELECTRON FIELD EMISSION PROPERTIES;
PATTERN METALLIZATION;
THREE POINT BENDING TESTS;
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EID: 0034274741
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(00)00293-4 Document Type: Article |
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Times cited : (19)
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References (27)
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