Improved varistor nonlinearity via sintering and acceptor impurity doping

EPJ Applied Physics

Volumn 11, Issue 3, 2000, Pages 155-158

  Wang, Y J ^a   Wang, J F ^a   Li, C P ^a   Chen, H C ^a   Su, W B ^a   Zhong, W L ^a   Zhang, P L ^a   Zhao, L Y ^b  

^a SHANDONG UNIVERSITY   (China)

^b Thunder Defense Center of Shandong   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; ELECTRIC FIELDS; IMPURITIES; SINTERING; THERMAL EFFECTS; TIN COMPOUNDS;

BARRIER HEIGHT;

VARISTORS;

EID: 0034273839     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2000157     Document Type: Article

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