High-efficiency, low voltage resonant-cavity light-emitting diodes operating around 650 nm

Electronics Letters

Volumn 36, Issue 20, 2000, Pages 1730-1731

  Gray, J W ^a   Jalili, Y S ^a   Stavrinou, P N ^a   Whitehead, M ^a   Parry, G ^a   Joel, A ^b   Robjohn, R ^b   Petrie, R ^b   Hunjan, S ^b   Gong, P ^b   Duggan, G ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Epitaxial Prod International Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAVITY RESONATORS; CURRENT VOLTAGE CHARACTERISTICS; OPTICAL FIBERS; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE STRUCTURES;

RESONANT-CAVITY LIGHT EMITTING DIODES (RCLED);

LIGHT EMITTING DIODES;

EID: 0034273620     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001182     Document Type: Article

References (6)

1. DE NEVE, H., BLONDELLE, J., BAETS, R., DEMEESTER, P., VAN DAELE, P., and BORGHS, G.: 'High efficiency planar microcavity LED's: comparison of design and experiment', IEEE Photonics Technol. Lett., 1995, 7, (3), pp. 287-289
2. LOTT, J.A., SCHNEIDER, R.P., VAWTER, G.A., ZOLPER, J.C., and MALLOY, K.J.: 'Visible (660 nm) resonant-cavity light-emitting diodes', Electron. Lett., 1993, 29, (4), pp. 328-329
3. STREUBEL, K., HELIN, U., OSKARSSON, V., BäCKLIN, E., and JOHANSSON, Å.: 'High brightness visible (660 nm) resonant-cavity light-emitting diode', IEEE Photonics Technol. Lett., 1998, 10, (12), pp. 1685-1687
4. 1-y)InP 670 nm quantum-well lasers for high-temperature operation', IEEE J. Quantum Electron., 1995, 31, (12), pp. 2159-2164
5. STAVRINOU, P.N., WHITEHEAD, M., PARRY, G., and BUTTON, C.C.: 'Angular spectrum of visible resonant-cavity light-emitting diodes', J. Appl. Phys., 1999, 86, (6), pp. 3475-3477
6. SIPILÄ, P., SAARINEN, M., GUINA, M., VILOKKINEN, V., TOIVONEN, M., and PESSA, M.: 'Temperature behaviour of resonant cavity light-emitting diodes at 650 nm', Semicond. Sci. Technol., 2000, 15, pp. 418-421