High resolution transmission electron microscopy study of the initial growth of diamond on silicon

Diamond and Related Materials

Volumn 9, Issue 9, 2000, Pages 1703-1707

  Lin, T ^a   Loh, K P ^a   Wee, A T S ^a   Shen, Z X ^a   Lin, J ^a   Lai, C H ^a   Gao, Q J ^b   Zhang, T J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; NUCLEATION; SILICON; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HOT FILAMENT CHEMICAL VAPOR DEPOSITION; NUCLEATION DENSITY;

DIAMOND FILMS;

EID: 0034273521     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00303-4     Document Type: Article

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