Morphological study of {311} crystal planes anisotropically etched in (100) silicon: Role of etchants and etching parameters

Journal of Micromechanics and Microengineering

Volumn 10, Issue 3, 2000, Pages 430-439

  Resnik, Drago ^a   Vrtacnik, Danilo ^a   Amon, Slavko ^a  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL ORIENTATION; ETCHING; MICROSTRUCTURE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; THERMAL EFFECTS;

ANISOTROPIC ETCHING;

SEMICONDUCTING SILICON;

EID: 0034273342     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/10/3/319     Document Type: Article

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