Amplitude dependent damping in HgI2 wide band gap semiconductor

Journal of Alloys and Compounds

Volumn 310, Issue 1-2, 2000, Pages 153-159

  Kardashev, B K ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC PROPERTIES; BINDING ENERGY; DISLOCATIONS (CRYSTALS); ENERGY GAP; HOLE TRAPS; PHOTOACOUSTIC EFFECT; PHOTOLUMINESCENCE; PLASTICITY; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SINGLE CRYSTALS; ULTRASONICS;

MERCURY IODIDE; MICROPLASTICITY; PINNING POINTS;

MERCURY COMPOUNDS;

EID: 0034271180     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(00)00937-3     Document Type: Article

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